S1-S0 relaxation time of saturable absorber DDI

Semiconductor Saturable Absorber Mirror (SESAM)

Saturable Absorber Mirrors For Passive Mode-locking

Saturable absorber mirrors (SAMs) are grown by low-temperature solid-source molecular beam epitaxy. The nonlinear absorber layer consists of one InGaAs quantum well. The devices have response times shorter than 10 ps and small non-saturable losses (less than 0.3%). SAMs with modulation depths between 0.6% and 2.0% were used to mode lock a Yb:KYW laser at around 1040 nm. The minimum achievable p...

The Effect of Proton Bombardment on Semiconductor Saturable Absorber Structures

Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery...

:YAG crystal Saturable Absorber for NASA SLR Stations

Since 1983, the current network of NASA Satellite Laser Ranging (SLR) stations used an Nd:YAG oscillator cavity in an active-passive configuration to generate 150-200 psec (2mj) 1064nm pulses for satellite ranging. This cavity (active-passive) used a liquid (chlorobenzene) dye cell as the passive saturable absorber. The dye consisted of Exciton (Kodak-9740) Q-Switch I dye and monochlorobenzene ...

Graphene-clad microfibre saturable absorber for ultrafast fibre lasers

Graphene, whose absorbance is approximately independent of wavelength, allows broadband light-matter interactions with ultrafast responses. The interband optical absorption of graphene can be saturated readily under strong excitation, thereby enabling scientists to exploit the photonic properties of graphene to realize ultrafast lasers. The evanescent field interaction scheme of the propagating...